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MP4410
TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (Four L2--MOSV in One)
MP4410
High Power, High Speed Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching
Industrial Applications Unit: mm
* * * * * *
4-V gate drivability Small package by full molding (SIP 12 pin) High drain power dissipation (4-device operation) : PT = 28 W (Tc = 25C) Low drain-source ON resistance: RDS (ON) = 0.12 (typ.) Low leakage current: IGSS = 10 A (max) (VGS = 16 V) IDSS = 100 A (max) (VDS = 60 V) Enhancement-mode: Vth = 0.8 to 2.0 V (ID = 1 mA)
Absolute Maximum Ratings (Ta = 25C)
Characteristics Drain-source voltage Gate-source voltage Drain current Peak drain current Drain power dissipation (1-device operation) Drain power dissipation Ta = 25C (4-device operation) Tc = 25C Channel temperature Storage temperature range Symbol VDSS VGSS ID IDP PD Rating 60 20 5 20 2.2 4.4 28 150 -55 to 150 Unit V V A A W
JEDEC JEITA TOSHIBA
2-32C1D
Weight: 3.9 g (typ.)
PT Tch Tstg
W C C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Array Configuration
2 3 5 4 9 10 12 7 11
1 6
8
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MP4410
Marking
MP4410
JAPAN
Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.
Thermal Characteristics
Characteristics Thermal resistance of channel to ambient (4-device operation, Ta = 25C) Thermal resistance of channel to case (4-device operation, Tc = 25C) Maximum lead temperature for soldering purposes (3.2 mm from case for 10 s) Rth (ch-c) 4.46 C/W Symbol Max Unit
Rth (ch-a)
28.4
C/W
TL
260
C
This transistor is an electrostatic-sensitive device. Please handle with caution.
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Forward transfer admittance Drain-source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS Vth |Yfs| RDS (ON) Ciss Crss Coss tr 10 V Turn-on time Switching time Fall time tf toff ton 0V 10 s VDD 30 V VIN: tr, tf < 5 ns, dutys cycle 1% VIN 12 ID = 2.5 A VOUT 25 ns 15 VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 60 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 2.5 A ID = 2.5 A, VGS = 4 V ID = 2.5 A, VGS = 10 V Min 60 0.8 3.0 Typ. 5.0 0.21 0.12 370 60 180 18 Max 10 100 2.0 0.31 0.16 Unit A A V V S pF pF pF
Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge
170
Qg Qgs Qgd ID = 5 A, VGS = 10 V, VDD = 48 V

12 8 4

nC nC nC
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MP4410
Source-Drain Diode Rating and Characteristics (Ta = 25C)
Characteristics Drain reverse current Peak drain reverse current Diode forward voltage Symbol IDR IDRP VDSF Test Condition IDR = 5 A, VGS = 0 V Min Typ. Max 5 20 -1.7 Unit A A V
Flyback-Diode Rating and Characteristics (Ta = 25C)
Characteristics Maximum forward current Reverse current Reverse voltage Forward voltage Symbol IFM IR VR VF VR = 120 V IR = 100 A IF = 1 A Test Condition Min 120 Typ. Max 5 0.4 1.8 Unit A A V V
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RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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